2013. 1. 3 1/8 semiconductor technical data KGF40N60KDA revision no : o general description kec field stop trench igbts offer low switching losses, high energy efficiency and short circuit ruggedness. it is designed for applications such as motor control, uninterrupted power supplies(ups), general inverters. features h high speed switching h high system efficiency h short circuit withstand times ! 10us h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature characteristic symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 80 a @tc=100 ? 40 a pulsed collector current i cm * 120 a diode continuous forward current @tc=100 ? i f 40 a diode maximum forward current i fm 80 a maximum power dissipation @tc=25 ? p d 250 w @tc=100 ? 100 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r thjc 0.5 ? /w thermal resistance, junction to case (diode) r thjc 1.0 ? /w thermal resistance, junction to ambient r t h ja 40 ? /w thermal characteristic e c g + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2013. 1. 3 2/8 KGF40N60KDA revision no : o electrical characteristics (ta=25 ? ) marking note 1 : energy loss include tail current and diode reverse recovery. characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =250 a 600 - - v collector cut-off current i ces v ge =0v, v ce =600v - - 250 a gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =4ma 4.5 5.5 7 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =40a - 1.65 2.1 v v ge =15v, i c =80a - 2.25 - v v ge =15v, i c =40a, t c = 125 ? - 1.9 - v dynamic total gate charge q g v cc =300v, v ge =15v, i c = 40a - 150 - nc gate-emitter charge q ge - 25 - nc gate-collector charge q gc - 80 - nc turn-on delay time t d(on) v cc =300v, i c =40a, v ge =15v,r g =10 ? inductive load, t c = 25 ? (note 1) - 50 - ns rise time t r - 45 - ns turn-off delay time t d(off) - 200 - ns fall time t f - 35 - ns turn-on switching loss e on - 1.1 - mj turn-off switching loss e off - 0.65 - mj total switching loss e ts - 1.75 - mj turn-on delay time t d(on) v cc =300v, i c =40a, v ge =15v, r g =10 ? inductive load, t c = 125 ? (note 1) - 50 - ns rise time t r - 45 - ns turn-off delay time t d(off) - 210 - ns fall time t f - 45 - ns turn-on switching loss e on - 1.2 - mj turn-off switching loss e off - 0.8 - mj total switching loss e ts - 2.0 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 3100 - pf ouput capacitance c oes - 220 - pf reverse transfer capacitance c res - 120 - pf short circuit withstand time t sc v cc =300v, v ge =15v, t c =100 ? 10 - - s
2013. 1. 3 3/8 KGF40N60KDA revision no : o electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 40a t c =25 ? - 1.8 2.3 v t c =100 ? - 1.5 - diode reverse recovery time t rr i f = 40a di/dt = 600a/ s t c =25 ? - 90 - ns t c =100 ? - 105 - diode peak reverse recovery current i rr t c =25 ? - 16 - a t c =100 ? - 29 - diode reverse recovery charge q rr t c =25 ? - 0.73 - c t c =100 ? - 1.55 -
2013. 1. 3 4/8 KGF40N60KDA revision no : o
2013. 1. 3 5/8 KGF40N60KDA revision no : o gate resistance r g ( ? ) switching time (ns)
2013. 1. 3 6/8 KGF40N60KDA revision no : o
2013. 1. 3 7/8 KGF40N60KDA revision no : o fig 17. forward characteristics forward voltage v f (v) forward current i f (a) forward current i f (a) reverse recovery current i rrm (a) reverse recovery time t rr (ns) forward current i f (a) 02040 10 30 60 50 0 20 25 30 15 5 10 fig 18. reverse recovery current fig 19. reverse recovery time di/dt=400a/ s di/dt=600a/ s 0204050 10 30 60 0 80 70 50 40 30 20 10 60 01 3 2 1 100 300 10 t c = 25 c t c = 125 c di/dt=400a/ s di/dt=600a/ s
2013. 1. 3 8/8 KGF40N60KDA revision no : o
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